• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
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  • 引用文献
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  • 优先权
    • 专利摘要:
    1522065 Controlling light INTERNATIONAL BUSINESS MACHINES CORP 26 May 1976 [5 June 1975] 21833/76 Heading G2F To facilitate thermal addressing of a liquid crystal layer with an infrared (laser) beam, whereby the liquid crystal may undergo a phase change, a layer containing the reaction product between a nickel complex and a polyamide is disposed adjacent at least one side of the liquid crystal layer. Such a layer may have a high infrared absorbance and yet be virtually transparent to visible light. The use of two layers is desirable insofar as lower concentrations of product may be employed with less risk of crystallization and/or thinner layers can be used which are smoother and flatter. In addition heat diffuses into the liquid crystal layer from both sides for faster response. As described each layer is disposed on a transparent substrate, either covering or being covered by a transparent electrode layer used for erasure. The nickel complex may be a phthalocyanine, a bis(dithiobenzil) chelate, or bis(octa-4,5,dithione) nickel.
    公开号:SU728731A3
    申请号:SU762365256
    申请日:1976-06-02
    公开日:1980-04-15
    发明作者:Джон Спрокел Джерард
    申请人:Интернэшнл Бизнес Машинз Корпорейшн (Фирма)；
    IPC主号:
    专利说明:

    (54) LIQUID CRYSTALS; SKY ELEMENT
    fra red part of the spectrum and do not absorb in the visible region. However, the absorption band of these compounds is usually narrow and the solution of this compound in N-methylpyrrolidinone absorbs strongly at wavelengths of 940 nm, but weakly absorbs at wavelengths of 850 nm, i.e., at the wavelength of a gallium arsenide laser. As a result, such a solution cannot absorb a sufficient amount of thermal energy for thermal recording on gallium arsenide. The aim of the invention is to increase the sensitivity to thermal effects of infrared radiation.
    The goal is achieved in that the proposed liquid crystal element is provided with at least one absorbing layer of substance with effective absorption of infrared radiation and less absorption of visible energy, the absorbing layer being in thermal contact with the liquid crystal layer. An example of an absorbing layer is the product of a reaction between a complex nickel compound, for example bis (dithiobenzyl) nickel, and a polyamide. Such a layer absorbs at least 90% at the wavelength of the arsenide laser, while the transmittance in the visible region of the spectrum is at least 80%.
    The liquid crystal element may also contain two absorbing layers, which may be located on either side of the liquid crystal layer and, in particular, between the transparent electrodes and glass substrates. Both absorbing layers contain a product of a reaction between bis (dithiobenzyl) nickel and polyamide.
    FIG. 1 shows a lumen-shaped liquid crystal element, a cross section; in fig. 2 and 3 - the same, other options; in fig. 4 is a graph of the illustrations of the absorption capacity of the product of the reaction between bis (bitobenzyl) nickel and polyamide.
    The liquid crystal element 1 (FIG. 1) contains a layer of liquid crystal 2. Any suitable liquid crystal substance can be used. Examples of such substances can serve as p-octyl cyanobiphenyl and ejro homologists. On both sides of the liquid, crystalline layer 2 are transparent electrodes 3 and 4, made, for example, from a mixture of tin oxide and indium oxide. The absorbing layer 5 is located between the transparent electrode 4 and the liquid crystal layer. The absorbing layer 5 can be located either directly in contact with the liquid crystal layer, or separated from it by a conductive electrode. Layer 5 intensively absorbs energy in a certain narrow area.
    infrared spectrum and relatively small energy in the visible spectrum (3500-7000 A). In a preferred embodiment of the invention, the absorbing layer 5 is the reaction product of bis (dithiobeneyl) nickel having the structure
    and polyamide. The product of this reaction is particularly well suited for absorbing gallium arsenide laser with wavelengths from 850 to 875 nm and at the same time transmits visible light.
    Dxo:
    H ((lHj) 5
    ((;neck
    bis (dimethylaminodithiobenzyl) nickel
    .0
    Cjuy
    R
    kg
    CzN- -.,
    bis (dithiooctadione 4,5) nickel
    Phthalocyanine nickel
    The liquid crystal layer 2, the electrodes 3, 4 and the absorbing layer 5 are sandwiched between glass substrates 6 and 7.
    The liquid crystal element 8 shown in Fig. 2 contains absorbing layers 9 and 10 located on both sides of the liquid crystal layer 11. The transparent electrodes 12 and 13 are in contact with the absorbing layers 9 and 10. Conductive electrodes 12 and 13 are applied on glass substrates 14 and 15.
    Absorbent layers contain a dye, for example, a reaction product between a nickel complex and a polyamide, which provides absorption from 60 to 70% in each layer. The total absorption achieved with the use of two conductive layers is about 90%.
    The advantage of using two absorbing layers is that heating can occur on both sides of the liquid crystal layer. As a result, heat penetrates into the liquid crystal layer at a faster rate and therefore the addressing time is reduced. For example, the typical addressing time of the dual layer device shown in FIG. 2 is about 25 MKCs for the monolayer device shown in FIG. 1-40 µs
    The use of two absorbing layers provides the possibility of reducing the dye concentration in each layer and / or the possibility of reducing the layer thickness. These dyes have a relatively low solubility, so that the use of low concentrations helps to avoid the difficulties associated with the crystallization of particles in solution. In addition, it is desirable to use thinner absorbing layers, since such layers are flatter and smoother, which improves the overall look compared to thicker layers that may have a matte surface.
    FIG. 3 shows a liquid crystal element 16 with transparent electrodes 17 and 18 located on both sides of the liquid crystal layer 19. Absorbing layers 20 and 21 are placed between the transparent electrodes 17 and 18 and the glass substrates 22 and 23. The difference between the elements shown in FIG. 2 and 3, consists in positioning the absorbing left relative to the transparent electrodes and to the liquid crystal layer.
    A preferred embodiment of the invention is the device shown in FIG. 3, because there are no dielectric losses in the absorbing layer present in the device depicted in FIG. 2. This makes it possible to erase with a lower voltage, most likely to erase such elements by about 40% lower. For example, to erase the image on the element of FIG. 2, a voltage of about 90 V is required, and for the element of FIG. 3 - about 40 V.
    FIG. 4 shows the spectral characteristics of the reacted and unreacted mixture of bis (dithiobenzyl) nickel and polyamide. The unreacted mixture in N-methylpyrrolidinone, as shown in curve 24, is characterized by a significant absorption at a wavelength of 940 nm. After heat treatment at 1 ° C for half an hour, the reacted mixture intensively absorbs the laser wavelength at 880 nm
    on gallium arsenide. This property is illustrated by curve 25.
    Example 1. 37 mg of bis (dithiobenzyl) nickel are dissolved in 500 ml of hot N-methylpyrrolidinone. This solution is diluted so that one part of bis (dithiobenzyl) nickel is contained in one thousand parts of the solvent. The diluted solution has a maximum absorption of 940 nm with an optical density of 0.65 per 10 mm thick. Absorption at 850 nm. Gives optical density equal to 0.2, i.e. almost full transparency. The hot solution is mixed with 500 mg of polyamide (R C 5057, issued by Dupont). Pa5 valve is cooled and then filtered. The absorption spectrum of the resulting solution is almost the same as before the addition of polyamide.
    For the manufacture of film thickness
    0 to 1 µm, the resulting mixture is applied to a hot substrate by centrifuging and heat treated for half an hour. This one. the film has an optical density of 0.9 at 875 nm and 0.85 at
    5,850 nm. Such a film absorbs 85% of the radiation of a gallium arsenide laser operating in a continuous mode. Its optical density in the visible spectrum is from 0.1 to 2.
    0 The film is examined under a microscope and, at the same time, they show no signs of precipitation of crystals. The film is then tested with a projection system, and it provides a clean background.
    five
    Example 2. A film is made from the reaction product between bis (dimethylaminodithiobenzyl) nickel and polyamide in the same steps as in Example 1. The maximum absorption for
    0 unreacted substance corresponded to 1.12-1.15 nm. The absorption range shifts after heat treatment, leading to a broad absorption band in the 1.0 nm region. This
    5, the absorbing layer is particularly useful for gallium arsenide infrared lasers emitting energy at 1.06 nm. Several samples of the film were produced with an absorption of 40 and 60% at 1.0 6 nm.
    0
    Example 3. Absorbing film is made from a solution containing 100 mg of bis (dithioctadione 4,5) nickel, 1 ml of N-methylpyrrolidinone and 2 g of polyamide according to the steps described in
    Example 5 1. The film from the reaction product absorbs strongly between 0.7 and 0.9 nm. The heat resistance of the film was Uizka and it was easily destroyed by the laser beam.
    0
    Example 4. A device was manufactured with the structure shown in FIG. 3. Absorbing layers are made using the product of the reaction between bis (dithiobranyl) nickel and
    权利要求:
    Claims (6)
    [1]
    The claims of the procurement (prototype).
    <RieZ
    TsNIIIPI Order
    PPP ‘Branch
    1180/55 1 Patent '
    1. A liquid crystal element comprising a layer of liquid crystal placed between two glass substrates, on the inside of which there are transparent electrodes, characterized in that, in order to increase the sensitivity of the element to the thermal effect of infrared radiation, the element is worn with at least one absorbent layer from a substance with effective absorption of infrared radiation and less absorption of visible radiation energy, and the absorbing layer is in thermal contact with the liquid crystal layer alla.
    [2]
    2. The element of pop. 1, characterized in that the absorbing layer contains a reaction product of a complex nickel compound with a polyamide.
    [3]
    3. The element of pop. 2, characterized in that the absorbing layer contains the reaction product between bis (dithiobenzyl) nickel and polyamide.
    [4]
    4. The element by π. 1, the fact that it contains two absorbing layers located on both sides of the liquid crystal layer.
    [5]
    5. The element of pop. 4, characterized in that the absorbing layers are located between the transparent electrodes and glass
    [6]
    6. The element according to claim 4, in that both layers contain a product between bis (dithiobenzyl) polyamide.
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    同族专利:
    公开号 | 公开日
    IT1068493B|1985-03-21|
    ATA305076A|1979-08-15|
    CH594896A5|1978-01-31|
    DE2618023A1|1976-12-23|
    HU176806B|1981-05-28|
    US3999838A|1976-12-28|
    AT355643B|1980-03-10|
    GB1522065A|1978-08-23|
    DD126177A5|1977-06-22|
    JPS5525646B2|1980-07-08|
    CA1067990A|1979-12-11|
    ES448560A1|1977-07-01|
    BR7603625A|1977-01-18|
    FR2313692B1|1979-09-21|
    JPS51150354A|1976-12-23|
    NL7606036A|1976-12-07|
    DE2618023C2|1982-10-28|
    BE841061A|1976-08-16|
    FR2313692A1|1976-12-31|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    US3114836A|1960-03-04|1963-12-17|Westinghouse Electric Corp|Thermal imaging devices utilizing a cholesteric liquid crystalline phase material|
    FR1535939A|1967-09-01|1968-08-09|Polaroid Corp|plastic optical elements|
    US3836243A|1972-06-27|1974-09-17|Bell Telephone Labor Inc|Liquid crystal display apparatus|FR2444381B1|1978-12-15|1983-03-04|Thomson Csf|
    JPS6345518B2|1981-08-15|1988-09-09|Ebara Mfg|
    FR2511798B1|1981-08-21|1983-10-21|Thomson Csf|
    US4917476A|1985-06-21|1990-04-17|British Aerospace Public Limited Company|Thermal imagers using liquid crystal sensing elements|
    US4787713A|1987-05-22|1988-11-29|The Mead Corporation|Transparent laser-addressed liquid crystal light modulator cell|
    US5026145A|1987-09-24|1991-06-25|Asahi Kogaku Kogyo Kabushiki Kaisha|Exposure apparatus|
    US4828366A|1987-12-07|1989-05-09|The Mead Corporation|Laser-addressable liquid crystal cell having mark positioning layer|
    US4974941A|1989-03-08|1990-12-04|Hercules Incorporated|Process of aligning and realigning liquid crystal media|
    US5684069A|1994-01-12|1997-11-04|Pitney Bowes Inc.|Composition for invisible ink responsive to infrared light|
    KR100241286B1|1996-09-23|2000-02-01|구본준|A liquid crystal display device|
    US7737928B2|2003-07-02|2010-06-15|Kent Displays Incorporated|Stacked display with shared electrode addressing|
    US7407405B1|2006-10-02|2008-08-05|Slenczka Thomas J|Plug connection device|
    US7764324B2|2007-01-30|2010-07-27|Radiabeam Technologies, Llc|Terahertz camera|
    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
    US05/584,083|US3999838A|1975-06-05|1975-06-05|Beam addressed liquid crystal cells|
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